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APT11058B2FLL APT11058LFLL
POWER MOS 7
(R)
1100V 20A 0.580
R
FREDFET
T-MAXTM
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
TO-264
* Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT11058B2FLL_LFLL UNIT Volts Amps
1100 20 80 30 40 568 4.55 -55 to 150 300 20 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1100 0.580 250 1000 100 3 5
(VGS = 10V, ID = 10A)
Ohms A nA Volts
4-2004 050-7181 Rev A
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT11058B2FLL_LFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 550V ID = 20A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 550V ID = 20A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 733V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 733V VGS = 15V ID = 20A, RG = 5 ID = 20A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
4135 680 120 160 20 105 16 8 40 12 700 210 1450 270
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
20 80 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -20A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -20A, di/dt = 100A/s) Reverse Recovery Charge (IS = -20A, di/dt = 100A/s) Peak Recovery Current (IS = -20A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
340 640 1.78 4.47 11.4 16.4
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.22 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 12.50mH, RG = 25, Peak IL = 20A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID20A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25
, THERMAL IMPEDANCE (C/W)
0.20
0.9
0.15
0.7 0.5
4-2004
PDM
0.10 0.3 0.05 0.1 0.05 10-5 10-4 SINGLE PULSE
Note:
t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-7181 Rev A
Z
JC
0
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
RC MODEL
45 40 35 30 25 20 15 10 5 0
APT11058B2FLL_LFLL
VGS =15,10 & 7.5V 7V
Junction temp. (C)
0.0893
0.0102F
6.5V
Power (watts)
0.0842
0.106F
6V
5.5V 5V
0.0485 Case temperature. (C)
0.980F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
60
ID, DRAIN CURRENT (AMPERES)
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO V = 10V @ 10A
GS
50 40 30 20 10 0
1.30 1.20 1.10 1.00 0.90 0.80 VGS=20V
TJ = -55C TJ = +25C TJ = +125C
VGS=10V
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
20 18
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
16 14 12 10 8 6 4 2 0 25
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0.90
3
I
D
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50
4-2004 050-7181 Rev A
= 10A = 10V
2.0 1.5 1.0 0.5 0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.5
V
GS
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
80
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
APT11058B2FLL_LFLL
Ciss
10 5
C, CAPACITANCE (pF)
100S
1,000 Coss
1mS 1 TC =+25C TJ =+150C SINGLE PULSE 10mS
100
Crss
I
D
= 20A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1 10 100 1100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
.1
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100
10
12
VDS= 220V
TJ =+150C TJ =+25C 10
8
VDS= 550V
VDS= 880V 4
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 120 100 td(off)
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 70 60 50 tf
V
DD G
1
td(on) and td(off) (ns)
80 60 40 20
V
DD G
= 733V
R
= 5
tr and tf (ns)
T = 125C
J
40 30 20 10
= 733V
L = 100H
R
= 5
T = 125C
J
L = 100H
tr
td(on) 0 0 15 20 25 30 35 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
5
10
15 20 25 30 35 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 2500
0
0
5
10
2500
V
= 733V
R
= 5
SWITCHING ENERGY (J)
2000
SWITCHING ENERGY (J)
T = 125C
J
L = 100H E ON includes diode reverse recovery.
2000 Eon 1500 Eoff 1000
V I
DD
1500 Eon 1000
= 733V
4-2004
D J
= 20A
500
050-7181 Rev A
Eoff
500
T = 125C L = 100H EON includes
15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
diode reverse recovery.
0
5
Typical Performance Curves
10% Gate Voltage T 125C J 90%
APT11058B2FLL_LFLL
Gate Voltage
td(on)
td(off)
Drain Voltage 90% 90% 10% Drain Current 5% Drain Voltage
TJ125C
tr
5% Switching Energy
tf
10% 0 Switching Energy Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF120
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7181 Rev A
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
4-2004
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Gate Drain Source
Gate Drain Source

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